INFLUENCE OF LASER EXCITATION ON THE PHOTOELECTRIC PROPERTIES OF ZnSe-ZnTe HETEROJUNCTIONS.

被引:0
|
作者
Bochkareva, L.V.
Simashkevich, A.V.
Ferdman, N.A.
机构
来源
| 1600年 / 06期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING ZINC COMPOUNDS
引用
收藏
相关论文
共 50 条
  • [1] INFLUENCE OF LASER EXCITATION ON PHOTOELECTRIC PROPERTIES OF ZNSE-ZNTE HETEROJUNCTIONS
    BOCHKAREVA, LV
    SIMASHKEVICH, AV
    FERDMAN, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1382 - 1383
  • [2] THE ELECTROOPTICAL PROPERTIES OF ZNSE-ZNTE HETEROJUNCTIONS
    FIRSZT, F
    LOZYKOWSKI, HJ
    ACTA PHYSICA POLONICA A, 1983, 64 (01) : 9 - 19
  • [3] ELECTROLUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS
    LOZYKOWSKI, HJ
    OCZKOWSKI, HL
    FIRSZT, F
    BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES MATHEMATIQUES ASTRONOMIQUES ET PHYSIQUES, 1973, 21 (05): : 485 - 489
  • [4] INTERFACE OBSERVATION OF ZNSE-ZNTE HETEROJUNCTIONS
    SERIZAWA, H
    EGUCHI, O
    TSUJIMOTO, Y
    FUKAI, M
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 5032 - +
  • [5] BLUE ELECTROLUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS
    FUJITA, S
    ARAI, S
    MORIAI, F
    SAKAGUCHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 1094 - 1095
  • [6] PHOTOSENSITIVE EPITAXIAL ZNSE-ZNTE HETEROJUNCTIONS
    GASHIN, PA
    SIMASHKEVICH, AV
    SHERBAN, DA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 104 - 105
  • [7] INTRINSIC RECOMBINATION RADIATION OF ZNSE-ZNTE HETEROJUNCTIONS
    KOT, MV
    PANASYUK, LM
    SIMASHKE.AV
    TSURKAN, AE
    SHERBAN, DA
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 1001 - +
  • [8] PHOTOELECTRIC PROPERTIES OF nSiC-pSi HETEROJUNCTIONS.
    Evdokimov, V.M.
    Strebkov, D.S.
    Tikhomirova, V.A.
    Fedosova, G.B.
    Applied Solar Energy (English translation of Geliotekhnika), 1982, 18 (05): : 11 - 16
  • [9] ELECTRICAL PROPERTIES AND INJECTION LUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS PREPARED BY LIQUID-PHASE EPITAXY
    FUJITA, S
    ARAI, S
    ITOH, F
    SAKAGUCHI, T
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3070 - 3075
  • [10] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF InAs-GaSb HETEROJUNCTIONS.
    Bergmann, Ya.V.
    Izvozchikov, B.V.
    Korol'kov, V.I.
    Mursakulov, N.N.
    Pramatarova, L.D.
    Tret'Yakov, D.N.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (08): : 930 - 931