Strain effect on 630 nm GaInP/AlGaInP multi-quantum well lasers

被引：0
|
作者：
Kamiyama, Satoshi [1 ]
Uenoyama, Takeshi [1 ]
Mannoh, Masaya [1 ]
Ohnaka, Kiyoshi [1 ]
机构：
[1] Matsushita Electric Industrial Co, Ltd, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 5 A期
关键词：
Semiconductor lasers;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：2571 / 2578
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