X-ray chemical analysis of multilayered thin films by scanning electron microscopy and total-reflection-angle X-ray spectroscopy

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) have been applied to X-ray chemical analysis of multilayered thin films on Si substrates. Clear differences were observed in the takeoff angle (θt) dependence of the X-ray intensities between Pd(10 nm)/Au(10 nm)/Si and Au(10 nm)/Pd(10 nm)/Si structures. The θt dependence varied with layer thickness increase from 10 to 13 nm. An AlN(30 nm)/Al2O3(30 nm)/Si structure was also successfully analyzed by measuring the θt dependence of NKα, OKα, AlKα and SiKα lines.