Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)

被引：0

作者：

机构：

[1] Qi, Wen-Jie

[2] Li, Bing-Zong

[3] Huang, Wei-Ning

[4] Gu, Zhi G.

[5] Lu, Hong Q.

[6] Zhang, Xiang-Jiu

[7] Zhang, Ming

[8] Dong, Guo-Sheng

来源：

Qi, Wen-Jie | 1600年 / Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States卷 / 2364期

关键词：

Cobalt - Cobalt compounds - Epitaxial growth - Multilayers - Semiconducting germanium compounds - Semiconducting silicon - Spectroscopy - Titanium;

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摘要：

The interfacial reaction of bilayer Co/Ti with epitaxially grown Si 1-xGex layer with x = 0.2 was investigated in this work. The multilayer films were characterized by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The experimental results show the formation of a multi-layer of TiN(O)/CoSi2(Ge)/Si. A highly preferential orientation was observed for the formed CoSi2(Ge) layer. The resulted resistivity of Co/Ti/SiGe/Si after a high temperature annealing is close to that of typical CoSi2 film.

引用

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[1] Solid state reaction of Co,Ti with epitaxially-grown Si1-xGex film on Si(100) substrate
1600, American Inst of Physics, Woodbury, NY, USA (77):
[2] SOLID-STATE REACTION OF CO,TI WITH EPITAXIALLY-GROWN SI1-XGEX FILM ON SI(100) SUBSTRATE
QI, WJ
LI, BZ
HUANG, WN
GU, ZG
LU, HQ
ZHANG, XJ
ZHANG, M
DONG, GS
MILLER, DC
AITKEN, RG
JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1086 - 1092
[3] INTERACTION OF PD WITH STRAINED LAYERS OF SI1-XGEX EPITAXIALLY GROWN ON SI(100)
BUXBAUM, A
EIZENBERG, M
RAIZMAN, A
SCHAFFLER, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3590 - 3593
[4] COMPOUND FORMATION AT THE INTERACTION OF PD WITH STRAINED LAYERS OF SI1-XGEX EPITAXIALLY GROWN ON SI(100)
BUXBAUM, A
EIZENBERG, M
RAIZMAN, A
SCHAFFLER, F
APPLIED PHYSICS LETTERS, 1991, 59 (06) : 665 - 667
[5] THE PHYSICS AND DEVICE APPLICATIONS OF EPITAXIALLY GROWN SI AND SI1-XGEX HETEROSTRUCTURES
KEARNEY, MJ
GEC JOURNAL OF RESEARCH, 1993, 10 (03): : 158 - 165
[6] OPTICAL 2ND-HARMONIC GENERATION IN SI1-XGEX FILM EPITAXIALLY GROWN ON SI(100)
MIZUTANI, G
SONODA, Y
USHIODA, S
MAEDA, T
MUROTA, J
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (1B): : L119 - L121
[7] Elastic strain relaxation in Si1-xGex layers epitaxially grown on Si substrates
Berbezier, I
Gallas, B
Derrien, J
SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 133 - 138
[8] SURFACE-MORPHOLOGY OF MOLECULAR-BEAM EPITAXIALLY GROWN SI1-XGEX LAYERS ON (100) AND (110) SI
PIKE, WT
FATHAUER, RW
ANDERSON, MS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1990 - 1993
[9] Interfacial reactions of the Co/Si1-xGex system
Luo, JS
Lin, WT
Chang, CY
Tsai, WC
Wang, SJ
MATERIALS CHEMISTRY AND PHYSICS, 1997, 48 (02) : 140 - 144
[10] Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex
Min, B. -G.
Yoo, J. -H.
Sohn, H. -C.
Ko, D. -H.
Cho, M. -H.
Lee, T. -W.
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