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- [2] Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 203 - 206
- [3] Growth temperature dependence of InAs islands grown on GaAs (001) substrates 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 288 - 291
- [4] Growth temperature dependence of InAs islands grown on GaAs (001) substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1022 - 1025
- [5] The growth of InAs layers on vicinal GaAs (110) substrates by MBE MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 219 - 222
- [6] GaSb bulk materials and InAs/GaSb superlattices grown by MBE on GaAs substrates Pan Tao Ti Hsueh Pao, 2007, 7 (1088-1091):
- [7] Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 1998, 523 : 231 - 234
- [9] Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates Journal of Electronic Materials, 2000, 29 : 940 - 943