IMPROVED LATERAL PNP WITH POLYSILICON CONTACTS.

被引：0
|
作者：
Anon
机构：
来源：
IBM technical disclosure bulletin | 1986年 / 29卷 / 01期
关键词：
SEMICONDUCTING SILICON - TRANSISTORS; BIPOLAR;
D O I：
暂无
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学科分类号：
摘要：
A method has been proposed to improve the lateral PNP (LPNP) in semiconductor devices by forming small PNP emitters by image transfer from a sidewall. The narrow width of the smaller emitter and self-aligned contact reduces series emitter resistance. Beta characteristics also are significantly improved. The invention calls for changes in a conventional bipolar manufacturing process following a 450 OMEGA /square resistor implant step as outlined.
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页码：171 / 173
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