PHOTOETCHING TECHNIQUES - 6.

被引：0
|
作者：
Hayashi, Fumiko
Teshima, Hiroh
机构：
来源：
Bulletin of the Electrotechnical Laboratory, Tokyo | 1976年 / 40卷 / 4-5期
关键词：
PHOTORESISTS;
D O I：
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中图分类号：
学科分类号：
摘要：
Technical processing data and characteristics of photoresists, KMNR (Kodak Micro Neg-Resist) and OSR (Tokyo Ohka Co. ) are described in detail. They have suitable properties for the IC process. Au-Cr metallization layers are successfully photoetched using KMNR and an I//2-NH//4OH etchant for 7,000 to 8,000 A thick Au. The photoetching process of the Au-Cr system is also shown.
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页码：421 / 425
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