HIGH-PERFORMANCE AlGaAs/GaAs/N-AlGaAs INSULATED-GATE INVERTED-STRUCTURE HEMT RING-OSCILLATOR.

被引：0
|
作者：
Kinoshita, H. [1 ]
Sano, Y. [1 ]
Nishi, S. [1 ]
Ishida, T. [1 ]
Akiyama, M. [1 ]
Kaminishi, K. [1 ]
机构：
[1] Research Laboratory, OKI Electric Industry Co., Ltd., 550-5 Higashiasakawa, Hachioji, Tokyo 193, Japan
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
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摘要：
SEMICONDUCTOR DEVICES, MISFET
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页码：2529 / 2530
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