ALGORITHMS FOR ENUMERATING ALL THE s-t CUTSETS IN O( vertical V vertical plus vertical E vertical ) PER CUTSET.

被引：0
|
作者：
Ariyoshi, Hiromu
Tsukiyama, Shuji
Shirakawa, Isao
Ozaki, Hiroshi
机构：
来源：
Electronics & communications in Japan | 1979年 / 62卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
The paper proposes two new algorithms to enumerate all the s-t cutsets with the worst-case time complexity of O((n plus m) multiplied by (times) (v plus 1)): one with space complexity of O(n**2) and the other of O(n plus m).
引用
收藏
页码：9 / 20
相关论文
共 15 条
  • [1] An O(vertical bar V vertical bar*vertical bar E vertical bar) algorithm for finding immediate multiple-vertex dominators
    Alstrup, S
    Clausen, J
    Jorgensen, K
    INFORMATION PROCESSING LETTERS, 1996, 59 (01) : 9 - 11
  • [2] Randomized O(M(vertical bar V vertical bar)) algorithms for problems in matching theory
    Cheriyan, J
    SIAM JOURNAL ON COMPUTING, 1997, 26 (06) : 1635 - 1655
  • [3] Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
    Hu, Zongyang
    Nomoto, Kazuki
    Li, Wenshen
    Zhang, Zexuan
    Tanen, Nicholas
    Quang Tu Thieu
    Sasaki, Kohei
    Kuramata, Akito
    Nakamura, Tohru
    Jena, Debdeep
    Xing, Huili Grace
    APPLIED PHYSICS LETTERS, 2018, 113 (12)
  • [4] WESTMAN-COMMISSION-CO V HOBART-INTERNATIONAL-INC - REFUSAL TO FIND PER SE ILLEGAL A MANUFACTURERS TERMINATION OF A DISTRIBUTOR AT THE BEHEST OF A COMPETING DISTRIBUTOR - A TREND TOWARD ABOLISHMENT OF THE PER SE RULE IN ALL VERTICAL RESTRAINTS
    ENGLISH, BM
    FACCENDA, SM
    LINTON, JD
    OSHEA, JJ
    NOTRE DAME LAW REVIEW, 1987, 62 (02) : 275 - 285
  • [5] Discussion of "Numerical investigation of the effect of vertical load on the lateral response of piles" by S.!Karthigeyan, V .V. G. S. T.!Ramakrishna, and K.!Rajagopal
    Juarez-Badillo, Eulalio
    Asce, F.
    JOURNAL OF GEOTECHNICAL AND GEOENVIRONMENTAL ENGINEERING, 2008, 134 (08) : 1222 - 1223
  • [6] Closure to "Numerical investigation of the effect of vertical load on the lateral response of piles" by S. Karthigeyan, V. V. G. S. T. Ramakrishna and K. Rajagopal
    Karthigeyan, S.
    Ramakrishna, V. V. G. S. T.
    Rajagopal, K.
    JOURNAL OF GEOTECHNICAL AND GEOENVIRONMENTAL ENGINEERING, 2008, 134 (08) : 1223 - 1223
  • [7] Simulation of β-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm2V-1s-1
    Akyol, Fatih
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (07)
  • [8] Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V-1 s-1
    Wakimoto, Daiki
    Lin, Chia-Hung
    Thieu, Quang Tu
    Miyamoto, Hironobu
    Sasaki, Kohei
    Kuramata, Akito
    APPLIED PHYSICS EXPRESS, 2023, 16 (03)
  • [9] Comment on "Influence of vertical load on the lateral response of piles in sand", by S. Karthigeyan, V.V.G.S.T. Ramakrishna, K. Rajagogal, Computers and Geotechnics 33(2) (2006) 121-131
    Comodromos, Emillos
    COMPUTERS AND GEOTECHNICS, 2007, 34 (06) : 539 - 539
  • [10] Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
    Duan, Xinlv
    Huang, Kailiang
    Feng, Junxiao
    Niu, Jiebin
    Qin, Haibo
    Yin, Shihui
    Jiao, Guangfan
    Leonelli, Daniele
    Zhao, Xiaoxuan
    Wang, Zhaogui
    Jing, Weiliang
    Wang, Zhengbo
    Wu, Ying
    Xu, Jeffrey
    Chen, Qian
    Chuai, Xichen
    Lu, Congyan
    Wang, Wenwu
    Yang, Guanhua
    Geng, Di
    Li, Ling
    Liu, Ming
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (04) : 2196 - 2202
12