Strain compensation effects of Si1-x-yGexCy alloys

被引：0
|
作者：
Yu, Z. [1 ]
Li, D.Z. [1 ]
Cheng, B.W. [1 ]
Huang, C.J. [1 ]
Lei, Z.L. [1 ]
Yu, J.Z. [1 ]
Wang, Q.M. [1 ]
Liang, J.W. [1 ]
机构：
[1] Inst. of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 01期
关键词：
Epitaxial growth - Error compensation - Recrystallization (metallurgy) - Strain;
D O I：
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中图分类号：
学科分类号：
摘要：
The strain compensation characteristics of Si1-x-yGexCy ternary alloys made by solid phase epitaxial recrystallization were studied. Because of the difference in both the projected range and the straggle of ions for Ge and C, the ratio of Ge/C is not a constant at different depth, and it leads to the difference in strain compensation effects. Gauss formula was used to analyze the strain compensation at different position in the alloy layers. The ratio of the peak densities of Ge and C ions should be within a limit when there was a full strain compensated area in the epitaxial layers. A series of samples with different C composition were prepared and the strain compensation characteristics detected. The experimental results are in good agreement with the prediction values.
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页码：53 / 56
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