The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1-x(ZnSe)x, Ge-(Ge2)1-x(ZnSe)x, GaP-(Ge2)1-x(ZnSe)x, and Si-(Ge2)1-x(ZnSe)x

被引：0
|
作者：
机构：
来源：
Tech Phys Lett | / 1卷 / 47期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1-x(ZnSe)x, Ge-(Ge2)1-x(ZnSe)x, GaP-(Ge2)1-x(ZnSe)x, and Si-(Ge2)1-x(ZnSe)x
    Saidov, AS
    Koshchanov, EA
    Razakov, AS
    TECHNICAL PHYSICS LETTERS, 1998, 24 (01) : 47 - 48
  • [2] The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x
    A. S. Saidov
    É. A. Koshchanov
    A. Sh. Razzakov
    Technical Physics Letters, 1998, 24 : 47 - 48
  • [3] Growing and investigation of (Ge2)1-x(ZnSe)x epitaxial layers
    Saidov, MS
    Saidov, AS
    Koschchanov, EA
    Razzakov, AS
    DOKLADY AKADEMII NAUK, 1998, 359 (02) : 188 - 189
  • [4] Liquid-phase epitaxy of solid solutions (Ge2)1-x(ZnSe)x
    Saidov, AS
    Razzakov, AS
    Risaeva, VA
    Koschanov, EA
    MATERIALS CHEMISTRY AND PHYSICS, 2001, 68 (1-3) : 1 - 6
  • [5] Features of the Properties of the Surface of (GaAs)1-x - γ(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots
    Zainabidinov, S. Z.
    Saidov, A. S.
    Boboev, A. Y.
    Usmonov, J. N.
    JOURNAL OF SURFACE INVESTIGATION, 2021, 15 (01): : 94 - 99
  • [6] MODEL FOR THE METASTABLE SYSTEM OF TYPE (GAAS)1-X(GE2)X
    KIM, K
    STERN, EA
    PHYSICAL REVIEW B, 1985, 32 (02): : 1019 - 1026
  • [7] Liquid phase epitaxy photoluminescence and photoelectrical properties of variband (Ge2)1-x(ZnSe)x layers
    Saidov, MS
    Saidov, AS
    Razzakov, AS
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1424 - 1427
  • [8] DENSITIES OF PHONON STATES FOR (GASB)1-X(GE2)X
    KOBAYASHI, A
    NEWMAN, KE
    DOW, JD
    PHYSICAL REVIEW B, 1985, 32 (08): : 5312 - 5327
  • [9] A PSEUDOPOTENTIAL APPROACH TO MIXING ENTHALPIES OF DISORDERED (GAAS)1-X(GE2)X
    ITO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1177 - L1179
  • [10] Optical properties of (Ge2)1-x (InP)x solid solutions
    Ismailov, Sh. K.
    Saidov, A. S.
    Durshimbetov, K.
    Zhollybekov, B.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (06) : 538 - 541
12345