IMPROVED METAL REMOVAL FOR INTEGRATED CIRCUIT FABRICATION.

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作者：
Hovel, H.J.
Huggins, H.A.
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Insulation, circuits | 1981年 / 27卷 / 02期
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摘要：
A new procedure helps in economically forming metal patterns on silicon integrated circuits. In the fabrication of these circuits, metal is applied over the entire substrate face after application of a photoresist pattern. While the metallic layer is lifted off to leave the desired pattern, a negative angle around the pattern insures complete removal of the excess metal without damage to the pattern.
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