MONOLITHIC THIN - FILM PHOTOCONDUCTOR - AC EL STRUCTURE WITH EXTRINSIC MEMORY BY OPTICAL COUPLING.

被引：0
|
作者：
Thioulouse, Pascal [1 ]
Solomon, Ionel [1 ]
机构：
[1] CNET, Bagneux, Fr, CNET, Bagneux, Fr
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 08期
关键词：
PHOTOCONDUCTING DEVICES - Thin Films - ZINC SULFIDE - Thin Films;
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中图分类号：
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摘要：
A memory ZnS:Mn ac thin-film electroluminescent (EL) device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic L-V characteristic. The operating characteristics are discussed. Outstanding features are a typical memory margin of 9-V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.
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页码：1149 / 1154
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