Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates

被引：0
|
作者：
Poirier, R. [1 ]
Soerensen, G. [1 ]
Bolognesi, C.R. [1 ]
Xu, X. [1 ]
Watkins, S.P. [1 ]
Lent, B. [1 ]
Reid, D. [1 ]
机构：
[1] Simon Fraser Univ, Burnaby, Canada
来源：
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC | 1999年
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摘要：
10
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页码：323 / 326
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