共 4 条
- [1] Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solution (vol 14, pg 3400, 1996)JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3603 - 3603Fourre, HDiette, FCappy, A
- [2] Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solutionJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05): : 3400 - 3402Fourre, HDiette, FCappy, A
- [3] Erratum: deep-etch silicon mm-waveguide structure for the relativistic acceleration of electrons [J. Vac. Sci. Technol. B 14, 2524 (1996)]Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (06):Willke, T.L.Feinerman, A.D.
