Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

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Compound Semiconductor Laboratory, Dept. of Mat. Sci. and Engineering, University of Southern California, Los Angeles, CA 90089, United States ^{[1
]}

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Appl Phys Lett | / 19卷 / 2836-2838期

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[1] Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate
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APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2836 - 2838
[2] Epitaxial lateral overgrowth of GaN on Si (111)
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[3] EPITAXIAL LATERAL OVERGROWTH OF SI ON NONPLANAR SUBSTRATE
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[5] EPITAXIAL LATERAL OVERGROWTH OF GAAS ON A SI SUBSTRATE
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[10] Epitaxial lateral overgrowth of GaN
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