Comparative study of the GaAs (113), (115), (001), (1¯1¯5¯), (1¯1¯3¯), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy

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作者：
Pristovsek, Markus [1 ]
Menhal, H. [1 ]
Schmidtling, T. [1 ]
Esser, N. [1 ]
Richter, W. [1 ]
机构：
[1] Technische Universität Berlin, Inst. Festkorperphysik, H., Berlin, Germany
来源：
Microelectronics Journal | / 30卷 / 04期
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页码：449 / 453
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