THEORY OF THE CHANNELING AVALANCHE PHOTODIODE.

被引：0
|
作者：
Brennan, Kevin [1 ]
机构：
[1] Georgia Inst of Technology, Sch of, Electrical Engineering, Atlanta, GA,, USA, Georgia Inst of Technology, Sch of Electrical Engineering, Atlanta, GA, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DIODES, PHOTODIODE
引用
收藏
页码：2467 / 2478
相关论文
共 50 条
  • [1] THEORY OF THE CHANNELING AVALANCHE PHOTODIODE
    BRENNAN, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2467 - 2478
  • [2] Ge AVALANCHE PHOTODIODE.
    Ando, Hiroaki
    Kanbe, Hiroshi
    Kimura, Tatsuya
    Reports of the Electrical Communication Laboratory, 1979, 27 (7-8): : 586 - 598
  • [3] THEORETICAL CHARACTERISATION OF A SUPERLATTICE AVALANCHE PHOTODIODE.
    Pal, B.B.
    Chakrabarti, P.
    Applied Physics A: Solids and Surfaces, 1987, A42 (03): : 173 - 177
  • [4] NOISE PROPERTIES AND TIME RESPONSE OF THE STAIRCASE AVALANCHE PHOTODIODE.
    Matsuo, Kuniaki
    Teich, Malvin C.
    Saleh, Bahaa E.A.
    Journal of Lightwave Technology, 1985, LT-3 (06) : 1223 - 1231
  • [5] Design and technology of a scintillating fiber sensor with silicon avalanche photodiode.
    Bar, J
    Dobosz, E
    Wegrzecka, I
    Wegrzecki, M
    OPTOELECTRONIC AND ELCTRONIC SENSORS IV, 2001, 4516 : 214 - 217
  • [6] MEASUREMENTS OF NATURAL RADIATION EFFECTS IN LOW NOISE AVALANCHE PHOTODIODE.
    Swanson, Eric A.
    Arnau, Elaine R.
    Walther, Frederick G.
    IEEE Transactions on Nuclear Science, 1987, NS-34 (06)
  • [7] Scintillation beta dosimetry and spectroscopy utilizing a large area avalanche photodiode.
    Kriss, AA
    Hamby, DM
    HEALTH PHYSICS, 2003, 84 (06): : S168 - S168
  • [8] PLANAR INP/INGAASP THREE-DIMENSIONAL GRADED-JUNCTION AVALANCHE PHOTODIODE.
    Chi, Gou-Chung
    Muehlner, D.J.
    Ostermayer Jr., F.W.
    Fruend, J.M.
    O'Brien, K.J.
    Pawelek, R.
    McCoy, R.J.
    Smith, R.C.
    Mattera Jr., Vincent D.
    IEEE Transactions on Electron Devices, 1987, ED-34 (11)
  • [9] InGaAs/InP PIN PHOTODIODE.
    Terauchi, Hitoshi
    Yamaguchi, Akira
    Yamabayashi, Naoyuki
    Nishizawa, Hideaki
    Kuhara, Yoshiki
    Kuroda, Masataka
    Iguchi, Shin-ichi
    Sumitomo Electric Technical Review, 1986, (25): : 89 - 96
  • [10] InP/Ga0. 47In0. 53As SUPERLATTICE AVALANCHE PHOTODIODE.
    Batra, S.
    Lahiri, A.
    Chakrabarti, P.
    Electronics Letters, 1988, 24 (15): : 964 - 965
12345