CHARACTERISTICS OF ISOTYPE n Ge-n GaAs HETEROJUNCTIONS.

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作者：

De Jaeger, J.C.

Salmer, G.

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来源：

IEE Proceedings I: Solid State and Electron Devices | 1980年 / 127卷 / 04期

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摘要：

SEMICONDUCTING GALLIUM ARSENIDE

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页码：207 / 211

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