Boron in polycrystalline SixGe1-x films. Phase diagram and solid solubility

被引：0
|
作者：
Kungliga Tekniska Hogskolan, Kista, Sweden [1 ]
机构：
来源：
J Electrochem Soc | / 7卷 / 2530-2534期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Boron in polycrystalline SixGe1-x films.: Phase diagram and solid solubility (vol 145, pg 2530, 1998)
    Mangelinck, D
    Hellberg, PE
    Zhang, SL
    d'Heurle, FM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (11) : 4043 - 4043
  • [2] Boron-doped polycrystalline SixGe1-x films. Dopant activation and solid solubility
    Solid State Electronics, Kista, Sweden
    J Electrochem Soc, 11 (3968-3973):
  • [3] Boron in polycrystalline SixGe1-x films
    Mangelinck, D
    Hellberg, PE
    Zhang, SL
    d'Heurle, FM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (07) : 2530 - 2534
  • [4] Boron-doped polycrystalline SixGe1-x films - Dopant activation and solid solubility
    Hellberg, PE
    Gagnor, A
    Zhang, SL
    Petersson, CS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (11) : 3968 - 3973
  • [5] Work function of boron-doped polycrystalline SixGe1-x films
    Hellberg, PE
    Zhang, SL
    Petersson, CS
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) : 456 - 458
  • [6] Phase diagram for pseudomorphic SixGe1-x crystals
    Chikichev, IS
    Vasev, AV
    Chikichev, SI
    CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 455 - 458
  • [7] Wet and dry oxidation of polycrystalline SixGe1-x films
    Hellberg, PE
    Zhang, SL
    d'Heurle, FM
    Petersson, CS
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 111 - 116
  • [8] Gd5(SixGe1-x)4 system - updated phase diagram
    Melikhov, Yevgen
    Hadimani, R. L.
    Raghunathan, Arun
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 395 : 143 - 146
  • [9] PHOTOLUMINESCENCE OF MBE GROWN SIXGE1-X FILMS
    HOUGHTON, DC
    ROWELL, NL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C543 - C543
  • [10] RAPID THERMAL CHEMICAL VAPOR-DEPOSITION OF INSITU BORON DOPED POLYCRYSTALLINE SIXGE1-X
    SANGANERIA, M
    GRIDER, DT
    OZTURK, MC
    WORTMAN, JJ
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (01) : 61 - 64
12345