共 50 条
- [1] GROWTH OF LOW-DISLOCATION-DENSITY INP SINGLE-CRYSTALS BY THE VCZ METHOD FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 18 - 29
- [3] Development of 4-inch diameter InP single crystal with low dislocation density using VCZ method 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 34 - 37
- [6] KYROPOULOS-GROWTH OF LOW-DISLOCATION-DENSITY KCL-CRYSTALS PHYSICS LETTERS, 1966, 20 (03): : 241 - &
- [7] Semi-insulating 4-6-inch GaAs crystals grown in low temperature gradients by the VCz method JOURNAL OF CERAMIC PROCESSING RESEARCH, 2003, 4 (02): : 62 - 66
- [9] Low dislocation density 3-inch Si doped GaAs crystals by vertical boat growth SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 279 - 282
- [10] Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 799 - 802