Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

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Grup de Física de Materials I, Department of Physics, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain [1 ]
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Mater Sci Eng B Solid State Adv Technol | / 549-552期
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Number:; MAT95-0875; Acronym:; CICYT; Sponsor: Comisión Interministerial de Ciencia y Tecnología;
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