Al adatom migration on the partly H-terminated Si(111) surface

被引：0
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作者：
Hoshino, Tadatsugu [1 ]
Enomoto, Nobuyuki [1 ]
Hata, Masayuki [1 ]
Tsuda, Minoru [1 ]
机构：
[1] Chiba Univ, Chiba, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 1 B期
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页码：487 / 490
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