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- [2] RECOMBINATION OF CARRIERS CONFINED AT IN 0.53GA0.47AS/INP AND IN0.75GA0.25AS0.5P0.5/INP INTERFACES PHYSICA B & C, 1985, 134 (1-3): : 399 - 402
- [4] Sheet Electron Density Dependence of Electron Mobility Anisotropy in In0.75Ga0.25As/InP Two-Dimensional Electron Gas 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
- [8] Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilities Appl Phys Lett, 8 (1111):
- [9] Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 329 - 332