Characterization of low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors by low-frequency noise measurements

被引：0
|
作者：
Dimitriadis, Charalabos A. [1 ]
Brini, Jean [1 ]
Kamarinos, Georges [1 ]
Ghibaudo, Gerard [1 ]
机构：
[1] ENSERG, Grenoble, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：72 / 77
相关论文
共 50 条
  • [1] Characterization of low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors by low-frequency noise measurements
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Ghibaudo, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 72 - 77
  • [2] Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    APPLIED PHYSICS LETTERS, 1997, 70 (07) : 880 - 882
  • [3] Characterization and defect analysis of low pressure chemical vapor deposited polycrystalline silicon thin-film transistors by low frequency noise measurements
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Ghibaudo, G
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 534 - 537
  • [4] Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors
    Angelis, CT
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Gueorguiev, VK
    Ivanov, TE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 968 - 974
  • [5] Origin of low-frequency noise in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Farmakis, FV
    Kamarinos, G
    Brini, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9919 - 9923
  • [6] Grain boundary potential barrier inhomogeneities in low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) : 1563 - 1565
  • [7] INFLUENCE OF DEPOSITION PRESSURE ON THE OUTPUT CHARACTERISTICS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    DIMITRIADIS, CA
    COXON, PA
    ECONOMOU, NA
    APPLIED PHYSICS LETTERS, 1993, 63 (07) : 943 - 945
  • [8] A New Model of Low-Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
    Wang, Ming
    Wang, Mingxiang
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [9] INFLUENCE OF DEPOSITION PRESSURE ON THE BULK AND INTERFACE STATES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    DIMITRIADIS, CA
    TASSIS, DH
    ECONOMOU, NA
    GIAKOUMAKIS, G
    APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2709 - 2711
  • [10] Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
    Yang, Yuyang
    Zhang, Meng
    Lu, Lei
    Wong, Man
    Kwok, Hoi-Sing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (04) : 1984 - 1988
12345