MBE growth and characterization of ZnSe-ZnTe strained-layer superlattices

被引：0
|
作者：
Shen, Aidong [1 ]
Cui, Jie [1 ]
Chen, Yunliang [1 ]
Xu, Liang [1 ]
Wang, Hailong [1 ]
机构：
[1] Shanghai Inst of Optics and Fine, Mechanics, Academia Sinica, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1991年 / 12卷 / 10期
关键词：
Molecular Beam Epitaxial Growth - Strained-layer Superlattices ZnSe-Znte;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
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页码：583 / 587
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