AlGaAs GaAs WAVELENGTH-DIVIDING PHOTODIODE WITH MULTI-LAYER FILTERS GROWN BY MOCVD.

被引：0
|
作者：
Sakai, Shiro [1 ]
Wang, Thu Tang [1 ]
Umeno, Masayoshi [1 ]
机构：
[1] Nagoya Inst of Technology, Dep of, Engineering Science, Nagoya, Jpn, Nagoya Inst of Technology, Dep of Engineering Science, Nagoya, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 07期
关键词：
OPTICAL FILTERS - SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An AlGaAs/GaAs wavelength-dividing photodiode that includes multiple AlAs/GaAs thin layers has been fabricated by MOCVD, and the improvement in the wavelength-dividing characteristics effects by the multiple thin layers has been demonstrated.
引用
收藏
页码：887 / 888
相关论文
共 19 条
  • [1] ALGAAS/GAAS WAVELENGTH-DIVIDING PHOTODIODE WITH MULTI-LAYER FILTERS GROWN BY MOCVD
    SAKAI, S
    WANG, TT
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07): : 887 - 888
  • [2] EFFECT OF BOUNDARY LAYER THICKNESS ON THE PHOTOLUMINESCENCE SPECTRA OF GaAs GROWN BY MOCVD.
    Sato, Michio
    Suzuki, Motoyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (12): : 1890 - 1894
  • [3] MULTI-WATER GROWTH OF HEMT LSI QUALITY AlGaAs/GaAs HETEROSTRUCTURES BY MOCVD.
    Tanaka, Hitoshi
    Itoh, Hiromi
    O'hori, Tatsuya
    Takikawa, Masahiko
    Kasai, Kazumi
    Takechi, Masaru
    Suzuki, Masahisa
    Komeno, Junji
    1600, (26):
  • [4] AlGaAs/GaAs DH LASERS ON Si SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD.
    Sakai, Shiro
    Soga, Tetsuo
    Takeyasu, Masanari
    Umeno, Masayoshi
    1600, (24):
  • [5] InGaAs/GaAs/AlGaAs Lasers Emitting at a Wavelength of 1190 nm Grown by MOCVD Epitaxy on GaAs Substrate
    Vinokurov, D. A.
    Nikolaev, D. N.
    Pikhtin, N. A.
    Stankevich, A. L.
    Shamakhov, V. V.
    Rastegaeva, M. G.
    Rozhkov, A. V.
    Tarasov, I. S.
    SEMICONDUCTORS, 2010, 44 (12) : 1592 - 1596
  • [6] InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    D. A. Vinokurov
    D. N. Nikolaev
    N. A. Pikhtin
    A. L. Stankevich
    V. V. Shamakhov
    M. G. Rastegaeva
    A. V. Rozhkov
    I. S. Tarasov
    Semiconductors, 2010, 44 : 1592 - 1596
  • [7] Intersubband infrared absorption in GaAs/AlGaAs multi-quantum well grown by MOCVD
    Cheng, Xingkui
    Huang, Bobiao
    Xu, Xiangang
    Liu, Shiwen
    Ren, Hongwen
    Jiang, Minhua
    Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1994, 13 (01): : 33 - 36
  • [8] A study on laser direct dry etching of GaAs/AlGaAs multi-layer
    Park, SK
    Lee, C
    Kim, EK
    LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING IV, 1999, 3618 : 370 - 377
  • [9] Multi-layer conduction in epitaxial InSb grown on GaAs substrates
    Air Force Research Lab, Wright Patterson AFB, United States
    IEEE Semicond Semi Insul Mater Conf SIMC, (177-180):
  • [10] GaAs Solar Cells Grown on Sapphire with Multi-Layer Transfer Printed Virtual Substrates
    Schmieder, Kenneth J.
    Lumb, Matthew P.
    Nolde, Jill A.
    Bennettt, Mitchell F.
    Tomasulo, Stephanie
    Yakes, Michael K.
    Mack, Shawn C.
    Frantz, Jesse A.
    Myers, Jason
    Walters, Robert J.
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 1437 - 1440
12