共 50 条
- [1] BAND-EDGE SHIFT AND X1-X3 ABSORPTION DEPENDING ON DONOR CONCENTRATION IN GAP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (06): : 912 - 918
- [3] TEMPERATURE-DEPENDENCE OF X1-X3 SPLITTING ENERGY IN LIGHTLY DOPED GAP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01): : 72 - 77
- [4] SATURATION OF THE BAND-EDGE ABSORPTION OF CDSXSE1-X MIXED-CRYSTALS AT ROOM-TEMPERATURE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 121 (02): : K187 - K190
- [6] Laser power dependence of the band-edge of CdSxSe1-x quantum dots MICRO- AND NANO-PHOTONIC MATERIALS AND DEVICES, 2000, 3937 : 114 - 122
- [7] Conduction band-tail estimated from the temperature dependence of X1-X3 threshold energy in heavily-doped n-GaP Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (10): : 1922 - 1928
- [8] CONDUCTION BAND-TAIL ESTIMATED FROM THE TEMPERATURE-DEPENDENCE OF X1-X3 THRESHOLD ENERGY IN HEAVILY-DOPED N-GAP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (10): : 1922 - 1928
- [9] ESTIMATION OF SOME BAND-EDGE STRUCTURE PARAMETERS OF THE SYSTEM (GETE)1-X(AGSBTE2)X PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 122 (01): : K53 - K58