ENERGY BANDS AND THEIR PRESSURE DEPENDENCE OF DIAMOND- AND ZINCBLENDE-TYPE CRYSTALS BY MOLECULAR ORBITAL METHOD.

被引：0
|
作者：
Shimizu, Tatsuo
Ishii, Nobuhiko
机构：
来源：
Memoirs of the Faculty of Technology, Kanazawa University | 1977年 / 11卷 / 01期
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中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
An assessment of calculation methods for energy bands of semiconductors is made. The extended Hueckel theory is found to reproduce fairly well the band structures of Si, Ge, GaAs and GaP by adjusting some of the parameters. The calculated pressure dependence of the energies of the various band extrema agrees qualitatively with the observed one.
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页码：11 / 15
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