Charge collection and trapping in low-temperature silicon detectors

被引:0
|
作者
机构
来源
J Appl Phys | / 11卷 / 8179期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Charge collection and trapping in low-temperature silicon detectors
    Penn, MJ
    Dougherty, BL
    Cabrera, B
    Clarke, RM
    Young, BA
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8179 - 8186
  • [2] Charge-collection and trapping effects in cryogenic silicon detectors
    Penn, MJ
    Dougherty, BL
    Cabrera, B
    Young, BA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 370 (01): : 215 - 217
  • [3] Impact of annealing of trapping times on charge collection in irradiated silicon detectors
    Kramberger, G.
    Cindro, V.
    Mandic, I.
    Mikuz, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 579 (02): : 762 - 765
  • [4] Recent progress in low-temperature silicon detectors
    Abreu, M
    D'Ambrosio, N
    Bell, W
    Berglund, P
    Borchi, E
    de Boer, W
    Borer, K
    Bruzzi, M
    Buontempo, S
    Casagrande, L
    Chapuy, S
    Cindro, V
    Devine, SRH
    Dezillie, B
    Dierlamm, A
    Dimcovski, Z
    Eremin, V
    Esposito, A
    Granata, V
    Grigoriev, E
    Grohmann, S
    Hauler, F
    Heijne, E
    Heising, S
    Hempel, O
    Herzog, R
    Härkönen, J
    Janos, S
    Jungermann, L
    Konorov, I
    Li, Z
    Lourenço, C
    De Masi, R
    Menichelli, D
    Mikuz, M
    Niinikoski, TO
    O'Shea, V
    Pagano, S
    Palmieri, VG
    Paul, S
    Pretzl, K
    Smith, K
    Solano, BP
    Sousa, P
    Pirollo, S
    Mendes, PR
    Ruggiero, G
    Sonderegger, P
    Tuominen, E
    Verbitskaya, E
    NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 2003, 125 : 169 - 174
  • [5] CHARGE COLLECTION IN SILICON STRIP DETECTORS
    BELAU, E
    KLANNER, R
    LUTZ, G
    NEUGEBAUER, E
    SEEBRUNNER, HJ
    WYLIE, A
    BOHRINGER, T
    HUBBELING, L
    WEILHAMMER, P
    KEMMER, J
    KOTZ, U
    RIEBESELL, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 214 (2-3): : 253 - 260
  • [6] CHARGE COLLECTION IN SILICON STRIP DETECTORS
    KRANER, HW
    BEUTTENMULLER, R
    LUDLAM, T
    HANSON, AL
    JONES, KW
    RADEKA, V
    HEIJNE, EHM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (01) : 405 - 414
  • [7] Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors
    Bell, WH
    Casagrande, L
    Da Via, C
    Granata, V
    Palmieri, VG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 435 (1-2): : 187 - 193
  • [8] Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors
    Bell, William H.
    Casagrande, Luca
    Da Via, Cinzia
    Granata, Valeria
    Palmieri, Vittorio G.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999, 435 (1-2): : 187 - 193
  • [9] Low-temperature detectors
    Angloher, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2): : 401 - 407
  • [10] Simulating charge collection in silicon pixel detectors
    Pindo, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (03): : 360 - 368