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- [1] Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells (vol 51, pg 17660, 1995)PHYSICAL REVIEW B, 1995, 52 (23): : 16940 - 16941Dawson, MDDuggan, GArent, DJ
- [2] Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wellsPhysical Review B: Condensed Matter, 51 (24):Dawson, M. D.Duggan, G.Arent, D. J.
- [3] OPTICAL MEASUREMENTS OF ELECTRONIC BAND-STRUCTURE IN TENSILE STRAIN (GA,IN)P-(AL,GA,IN)P QUANTUM-WELLSPHYSICAL REVIEW B, 1995, 51 (24): : 17660 - 17666DAWSON, MDDUGGAN, GARENT, DJ
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- [6] N-, B-, P-, Al-, As-, and Ga-graphdiyne/graphyne lattices: first-principles investigation of mechanical, optical and electronic propertiesJOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (10) : 3025 - 3036Mortazavi, BohayraShahrokhi, MasoudMadjet, Mohamed E.Hussain, TanveerZhuang, XiaoyingRabczuk, Timon
- [7] Valence-band structure and optical absorption in p-type GaAs-Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric fieldSuperlattices Microstruct, 5 (1037-1046):Ecole Superieure de Physique et, Chimie Industrielles, Paris, France
- [8] Valence-band structure and optical absorption in p-type GaAs-Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric fieldSUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (05) : 1037 - 1046Melliti, RTronc, PMao, EMajerfeld, ADepeyrot, J
- [9] A comparative study of electronic structure, adsorption properties, and optical responses of furan and tetrahydrofuran adsorbed pristine, Al and Ga doped B12X12 (X=N and P) nanocagesJOURNAL OF MOLECULAR STRUCTURE, 2024, 1296Roy, Ria SinhaBanerjee, SoumadipGhosh, SunitiGhosh, AvikDas, Abhijit K.