Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications

被引：0
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作者：
Ruvimov, S. [1 ]
Liliental-Weber, Z. [1 ]
Washburn, J. [1 ]
Amano, H. [1 ]
Akasaki, I. [1 ]
机构：
[1] Lawrence Berkeley Natl Lab, Berkeley, United States
来源：
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC | 1999年
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摘要：
18
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页码：251 / 254
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