Applications of SiC thin films in low temperature devices

被引：0
|
作者：
Borisenko, I.Yu. [1 ]
Zakosarenko, V.M. [1 ]
Ilyichov, E.V. [1 ]
Tulin, V.A. [1 ]
机构：
[1] Russian Acad of Sciences, Moscow, Russia
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1992年 / B11卷 / 1-4期
关键词：
Silicon Carbide - Amorphous - Sputtering - Superconducting Devices - Josephson Junctions - Transistors; Field Effect - Gates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The technology of magnetron sputtering of amorphous SiC films (as tested by electronography) has been developed for applications of SiC as the barrier layer in Nb-SiC-Nb Josephson junctions and as the gate dielectric in field effect devices.
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页码：117 / 119
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