Low-energy electron energy-loss peak due to excitation of the surface state associated with dangling bonds on Si(001)-2x1 surface

被引：0

作者：

Shigeta, Yukichi ^{[1
]}

机构：

[1] Yokohama City Univ, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27 pt 1卷 / 06期

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摘要：

引用

页码：908 / 911

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[1] LOW-ENERGY ELECTRON ENERGY-LOSS PEAK DUE TO EXCITATION OF THE SURFACE-STATE ASSOCIATED WITH DANGLING BONDS ON SI(001)-2X1 SURFACE
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[2] ENHANCEMENT OF SURFACE-PLASMON EXCITATION BY LOW-ENERGY ELECTRON DUE TO SURFACE RESONANCE ON SI (001)-2X1
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[3] STRUCTURE OF SI(001) 2X1 SURFACE - STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION
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[4] LOW-ENERGY ELECTRON ENERGY-LOSS SPECTRA ASSOCIATED WITH RECONSTRUCTED STRUCTURE ON SI(111) SURFACE
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[5] Surface atomic geometry of Si(001)-(2x1): A low-energy electron-diffraction structure analysis
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[7] OPTICAL AND ELECTRON ENERGY-LOSS SPECTRA OF SI(111)2X1
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[8] Theoretical study of isolated dangling bonds, dangling bond wires, and dangling bond clusters on a H:Si(001)-(2x1) surface
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[9] SURFACE-WAVE RESONANCE EFFECT IN LOW-ENERGY ELECTRON ENERGY-LOSS SPECTRA FROM MGO(001)
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[10] Low-energy positrons at the Si(100)-2x1 surface with adsorbed hydrogen and oxygen
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