Reliability of InP-based HBT IC technology for high-speed, low-power applications

被引：0
|
作者：
Hafizi, Madjid [1 ]
Stanchina, William E. [1 ]
Williams, Freddie [1 ]
Jensen, Joseph F. [1 ]
机构：
[1] Hughes Research Lab, Malibu, United States
来源：
IEEE Transactions on Microwave Theory and Techniques | 1995年 / 43卷 / 12 pt 2期
关键词：
Amplification - Hydrogen - Integrated circuits - Photodiodes - Resistors - Semiconducting aluminum compounds - Semiconducting gallium compounds - Semiconducting indium phosphide - Substrates - Tantalum compounds - Temperature - Thin films;
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页码：3048 / 3054
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