Interrelationship of dynamic and static parameters of bipolar power transistor structures under irradiation

被引:0
|
作者
Lugakov, P.F.
Pokotilo, Yu.M.
Shusha, V.V.
机构
来源
Soviet electrical engineering | 1988年 / 59卷 / 11期
关键词
Alpha Particles - Gamma Quanta - Power Transistors - Radiation Technology Processing;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:75 / 78
相关论文
共 50 条
  • [1] A POWER BIPOLAR JUNCTION TRANSISTOR MODEL DESCRIBING THE STATIC AND THE DYNAMIC BEHAVIOR
    XU, CH
    SCHRODER, D
    PESC 89 RECORD, VOLS 1 AND 2: 20TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, 1989, : 314 - 321
  • [2] Interrelationship between oxidation parameters of jet engine fuels under dynamic and static conditions
    Bejko, Yu.O.
    Belyanskij, V.P.
    Khimiya i Tekhnologiya Topliv i Masel, 1998, (03):
  • [3] Static and dynamic characterization of Silicon Carbide bipolar junction transistor
    Claudio, A
    Wang, HF
    Huang, AQ
    Agarwal, AK
    IECON'03: THE 29TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1 - 3, PROCEEDINGS, 2003, : 1173 - 1178
  • [4] Computer simulation of the scaled power bipolar SHF transistor structures
    Nelayev, V. V.
    Efremov, V. A.
    Snitovsky, Yu. P.
    NANODESIGN, TECHNOLOGY, AND COMPUTER SIMULATIONS, 2007, 6597
  • [5] Measurement of dynamic load lines of power heterojunction bipolar transistor
    Ohara, S
    Nakasha, Y
    Iwai, T
    Joshin, K
    1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES, 1997, : 909 - 912
  • [6] DESIGN FOR OPTIMAL VALUES OF PARAMETERS OF EPITAXIAL BIPOLAR POWER TRANSISTOR SWITCHES
    HASSAN, MMS
    DOMINGOS, H
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 71 (05) : 745 - 755
  • [7] Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure
    王永顺
    冯晶晶
    刘春娟
    汪再兴
    张彩珍
    常鹏
    半导体学报, 2011, 32 (11) : 60 - 64
  • [8] Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure
    Wang Yongshun
    Feng Jingjing
    Liu Chunjuan
    Wang Zaixing
    Zhang Caizhen
    Chang Peng
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (11)
  • [9] Simultaneous reduction of dynamic and static power in scan structures
    Sharifi, S
    Jaffari, J
    Hosseinabady, M
    Afzali-Kusha, A
    Navabi, Z
    DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION, VOLS 1 AND 2, PROCEEDINGS, 2005, : 846 - 851
  • [10] INTERRELATIONSHIP OF THE CHARACTERISTICS OF CRACK RESISTANCE OF METALLIC MATERIALS UNDER STATIC AND DYNAMIC LOADING CONDITIONS
    ABRAMYAN, KG
    GOLOVESHKIN, YV
    TUZLUKOVA, NI
    STRENGTH OF MATERIALS, 1984, 16 (08) : 1128 - 1132