共 50 条
- [5] EFFECT OF TRAP STATES AT THE OXIDE-SILICON INTERFACE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2008, 22 (30): : 5357 - 5364
- [7] Extraction of trap states at the oxide-silicon interface and grain boundary for polycrystalline silicon thin-film transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 A): : 5227 - 5236
- [8] Extraction of trap states at the oxide-silicon interface and grain boundary in polycrystalline silicon thin-film transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01): : 112 - 113
- [9] Extraction of trap states at the oxide-silicon interface and grain boundary for polycrystalline silicon thin-film transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A): : 5227 - 5236