High-density plasma-induced etch damage of GaN

被引：0
|
作者：
Shul, R.J. [1 ]
Zhang, L. [1 ]
Baca, A.G. [1 ]
Willison, C.G. [1 ]
Han, J. [1 ]
Pearton, S.J. [1 ]
Ren, F. [1 ]
Zolper, J.C. [1 ]
Lester, L.F. [1 ]
机构：
[1] Sandia Natl Lab, Albuquerque, United States
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 573卷
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页码：271 / 279
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