EFFECT OF GROWTH TEMPERATURE ON InGaAsP/GaAsP EPITAXIAL GROWTH.

被引：0
|
作者：
Fujii, Sadao [1 ]
Tobita, Manabu [1 ]
Furuta, Shigeru [1 ]
Sakai, Shiro [1 ]
Umeno, Masayoshi [1 ]
机构：
[1] Kanegafuchi Chemical Industry Co, Kobe, Jpn, Kanegafuchi Chemical Industry Co, Kobe, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1988年 / 27卷 / 03期
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摘要：
27
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页码：379 / 383
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