INFLUENCE OF COPPER ON ELECTRICAL PROPERTIES OF 6H alpha -SiC.

被引：0
|
作者：
Gailitis, I.
Kosaganova, M.
Klotyn'sh, E.
Reifman, M.
Feltyn', I.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Experiments to determine the influence of diffused Cu in 6H alpha -SiC, using an n-type sample doped with nitrogen and a p-type sample doped with boron, showed that in the case of the n-type sample the diffusion of copper increased the Hall coefficient indicating that the Cu behaved as an acceptor and that it compensated some of the nitrogen donors; in the p-type sample, before the diffusion, the Hall coefficient had a plateau at high temperatures; after the diffusion of copper the hole density was an order of magnitude higher and the plateau was not observed. Moreover, heating in the presence of copper reduced the slope of the temperature dependence R(T).
引用
收藏
相关论文
共 50 条
  • [1] INFLUENCE OF COPPER ON ELECTRICAL PROPERTIES OF 6H ALPHA-SIC
    GAILITIS, I
    KOSAGANOVA, M
    KLOTYNSH, E
    REIFMAN, M
    FELTYN, I
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 793 - 793
  • [2] PIEZORESISTANCE OF P-TYPE 6H SiC.
    Lomakina, G.A.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 17 (09): : 1808 - 1811
  • [3] Optical and electrical properties of 6H alpha-SiC irradiated by swift xenon ions
    Levalois, M
    LhermitteSebire, I
    Marie, P
    Paumier, E
    Vicens, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 107 (1-4): : 239 - 241
  • [4] INFLUENCE OF IMPURITIES ON FUNDAMENTAL ABSORPTION-EDGE OF ALPHA SIC(6H)
    VIOLINA, GN
    SELEZNEV, BI
    TAIROV, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1215 - 1216
  • [5] Optical and electrical properties of 6H α-SiC irradiated by swift xenon ions
    Levalois, M.
    Lhermitte-Sebire, I.
    Marie, P.
    Paumier, E.
    Vicens, J.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 107 (1-4):
  • [6] Optical and electrical properties of 6H α-SiC irradiated by swift xenon ions
    Levalois, M.
    Lhermitte-Sebire, I.
    Marie, P.
    Paumier, E.
    Vicens, J.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 107 (1-4): : 239 - 241
  • [7] IMPURITY ABSORPTION IN 6H ALPHA SIC DOPED WITH NITROGEN
    PURTSELA.IM
    KHAVTASI, LG
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (04): : 1007 - +
  • [8] EFFECTS OF AR AND H-2 ANNEALING ON THE ELECTRICAL-PROPERTIES OF OXIDES ON 6H SIC
    VONKAMIENSKI, ES
    GOLZ, A
    KURZ, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 131 - 133
  • [9] Synthesis of α-SiC(6H) using 6H polytype SiC diluent by the seeding technique
    Nersisyan, H. H.
    Hou, Y. B.
    Won, C. W.
    POWDER TECHNOLOGY, 2009, 189 (01) : 48 - 51
  • [10] Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
    Kalinina, EV
    Zubrilov, AS
    Kuznetsov, NI
    Nikitina, IP
    Tregubova, AS
    Shcheglov, MP
    Bratus, VY
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 497 - 500
12345