Simulations of BCl3/Cl2/Ar plasmas with comparisons to diagnostic data

被引:0
|
作者
Meeks, Ellen
Ho, Pauline
Ting, Aili
Buss, Richard J.
机构
来源
| 1998年 / 16期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Simulations of BCl3/Cl2/Ar plasmas with comparisons to diagnostic data
    Meeks, E
    Ho, P
    Ting, AL
    Buss, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (04): : 2227 - 2239
  • [2] Dry plasma etching of GaAs vias in BCl3/Ar and Cl2/Ar plasmas
    Chen, YW
    Ooi, BS
    Ng, GI
    Tan, CL
    Chan, YC
    DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES, 1999, 3896 : 199 - 206
  • [3] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, Y.H.
    Kim, H.S.
    Yeom, G.Y.
    Lee, J.W.
    Yoo, M.C.
    Kim, T.I.
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
  • [4] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, YH
    Kim, HS
    Yeom, GY
    Lee, JW
    Yoo, MC
    Kim, TI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1478 - 1482
  • [5] GaN etching in BCl3/Cl2 plasmas
    Shul, RJ
    Ashby, CIH
    Willison, CG
    Zhang, L
    Han, J
    Bridges, MM
    Pearton, SJ
    Lee, JW
    Lester, LF
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 487 - 493
  • [6] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
    Yanjun Han
    Song Xue
    Tong Wu
    Zhen Wu
    Wenping Guo
    Yi Luo
    Zhibiao Hao
    Changzheng Sun
    Science in China Series E: Technological Sciences, 2004, 47 : 150 - 158
  • [7] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
    Han, YJ
    Xue, S
    Wu, T
    Wu, Z
    Guo, WP
    Luo, Y
    Hao, ZB
    Sun, CZ
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2004, 47 (02): : 150 - 158
  • [9] Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas
    Wu, T
    Hao, ZB
    Tang, G
    Luo, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A): : L257 - L259
  • [10] Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas
    Wu, Tong
    Hao, Zhi-Biao
    Tang, Guang
    Luo, Yi
    Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (3 A):