Field-induction-drain thin-film transistors for liquid-crystal display applications

被引：0
|
作者：
Tanaka, Keiji [1 ]
Suyama, Shiro [1 ]
Kato, Kinya [1 ]
机构：
[1] NTT Interdisciplinary Research Lab, Musashino, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 B期
关键词：
Integrated Circuits; CMOS - Semiconducting Silicon - Thin Films - Transistors;
D O I：
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中图分类号：
学科分类号：
摘要：
A field-induction-drain (FID) poly-Si thin-film transistor (TFT), in which an electrically induced layer is used as a drain, is proposed. This TFT achieves a low OFF current and a high ON/OFF current ratio by simply incorporating an additional gate electrode. Moreover, the structure can be modified to make it suitable for complementary MOS (CMOS) applications. In this unified-structure FID (UFID) TFT, n-channel operation and p-channel operation are interchangeable. This paper presents this electrically induced layer which works well as a TFT drain and has beneficial influence on TFT characteristics.
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页码：3302 / 3307
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