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- [2] BAND OFFSETS IN GAAS/GA0.51IN0.49P HETEROSTRUCTURES GROWN BY MOCVD INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 351 - 356
- [6] PSEUDOMORPHIC GA0.51IN0.49P/IN0.15GA0.85AS/GAAS HIGFETS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 619 - 624
- [7] Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 891 - 894
- [9] ELECTRICAL AND OPTICAL EFFECTS IN RESONANT TUNNELING IN (AL, GA) AS-GAAS DOUBLE-BARRIER HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 222 - 224