Annealing behavior of MeV implanted carbon in silicon

被引：0
|
作者：
Isomae, Seiichi
Ishiba, Tsutomu
Ando, Toshio
Tamura, Masao
机构：
来源：
Journal of Applied Physics | 1993年 / 74卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] ANNEALING BEHAVIOR OF MEV IMPLANTED CARBON IN SILICON
    ISOMAE, S
    ISHIBA, T
    ANDO, T
    TAMURA, M
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 3815 - 3820
  • [2] Annealing behavior of a doubly MeV implanted silicon
    Cho, NH
    Huh, TH
    Jang, YT
    Ro, JS
    Oh, JG
    Lee, KH
    Cho, BJ
    Kim, JC
    ION IMPLANTATION TECHNOLOGY - 96, 1997, : 661 - 664
  • [3] DAMAGE ANNEALING BEHAVIOR OF 3 MEV SI+-IMPLANTED SILICON
    RAI, AK
    BAKER, J
    INGRAM, DC
    APPLIED PHYSICS LETTERS, 1987, 51 (03) : 172 - 174
  • [4] Radiation damage and annealing behavior of 2.0 MeV Er+ implanted silicon
    Li, Yu-Guo
    Xue, Cheng-Shan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (12): : 1534 - 1537
  • [5] THE ANNEALING OF MEV ENERGY BORON IONS IMPLANTED INTO SILICON
    LU, WX
    QIAN, YH
    LU, DT
    WANG, ZL
    VACUUM, 1989, 39 (2-4) : 223 - 226
  • [6] Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon
    Mohapatra, S
    Mahapatra, DP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (1-2): : 249 - 254
  • [7] Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon
    Li, YG
    Tan, CY
    Zhang, JP
    Xue, CS
    Xu, HL
    Liu, PJ
    Wang, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 77 (01): : 1 - 5
  • [8] THE ANNEALING BEHAVIOR OF ANTIMONY IMPLANTED POLYCRYSTALLINE SILICON
    TANDON, JL
    HARRISON, HB
    NEOH, CL
    SHORT, KT
    WILLIAMS, JS
    APPLIED PHYSICS LETTERS, 1982, 40 (03) : 228 - 230
  • [9] Damage and its rapid thermal annealing behavior of 1 MeV Ar+-ion-implanted silicon
    Kim, Kwang Il
    Kuwano, Hiroshi
    Kwon, Young Kyu
    Hahn, Soo Kap
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (02): : 1109 - 1113
  • [10] Unusual annealing behavior of 1.56 MeV Sb+ ion implanted single-crystal silicon
    Gao, Jianxia
    Zhu, Dezhang
    Cao, Dexin
    Zhou, Zuyao
    Zhao, Guoqing
    He Jishu/Nuclear Techniques, 1994, 17 (01): : 1 - 6
12345