Annealing of aluminum thin films deposited on silica

被引：0

作者：

Fleury, Vincent ^{[1
]}

Balazs, Lazlo ^{[1
]}

机构：

[1] Ecole Polytechnique, Palaiseau, France

来源：

Physica A: Statistical Mechanics and its Applications | 1996年 / 233卷 / 3-4期

关键词：

Annealing - Fractals - Morphology - Reaction kinetics - Redox reactions - Silica - Thermal effects - Thermodynamics - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The reaction of aluminum on silica has long been known. We present a morphological study of the small irregular transparent domains which form during the annealing of Al thin films on SiO2 at temperatures in the range 400-600 °C. We show that the oxidation of Al and the reduction of SiO2 proceed via irreversible growth of 2-D aggregates, which, in some regimes, are DLA-fractals. The morphological approach, which is complementary to the purely thermodynamic studies done so far, gives information on the chemical process.

引用

页码：640 / 654

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