THEORY OF GENERATION-RECOMBINATION NOISE AND RESPONSITIVITY IN OVERLAP STRUCTURE PHOTOCONDUCTORS.

被引：0

作者：

Smith, D.L. ^{[1
]}

机构：

[1] Honeywell Systems and Research Center, Minneapolis, MN 55440, United States

来源：

| 1600年 / 54期

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[1] THEORY OF GENERATION-RECOMBINATION NOISE AND RESPONSIVITY IN OVERLAP STRUCTURE PHOTOCONDUCTORS
SMITH, DL
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5441 - 5448
[2] THEORY OF GENERATION-RECOMBINATION NOISE IN INTRINSIC PHOTOCONDUCTORS
SMITH, DL
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7051 - 7060
[3] GENERATION-RECOMBINATION THEOREM AND NOISE IN PHOTOCONDUCTORS
COOK, JG
BLOK, J
VANKAMPE.NG
PHYSICA, 1967, 35 (02): : 241 - &
[4] GENERATION-RECOMBINATION AND DIFFUSION NOISE IN CADMIUM SULPHIDE PHOTOCONDUCTORS
DAMODARPAI, M
VANVLIET, KM
PHYSICA STATUS SOLIDI, 1967, 21 (02): : 819 - +
[5] THEORY OF DEEP LEVEL TRAP EFFECTS ON GENERATION-RECOMBINATION NOISE IN HGCDTE PHOTOCONDUCTORS
IVERSON, AE
SMITH, DL
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 579 - 587
[6] EFFECT OF DIFFUSION AND DRIFT ON GENERATION-RECOMBINATION NOISE IN HGCDTE PHOTOCONDUCTORS
SMITH, DL
LO, SK
GENOVA, JD
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 259 - 262
[7] THEORY OF THE GENERATION-RECOMBINATION NOISE IN SEMICONDUCTORS
IKHSANOV, RN
URITSKII, ZI
SOVIET PHYSICS-SOLID STATE, 1963, 5 (01): : 247 - 249
[8] EFFECTS OF BLOCKING CONTACTS ON GENERATION-RECOMBINATION NOISE AND RESPONSIVITY IN INTRINSIC PHOTOCONDUCTORS
SMITH, DL
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1663 - 1669
[9] CONCERNING THE THEORY OF GENERATION-RECOMBINATION NOISE IN SOLIDS
VANVLIET, KM
PHYSICS LETTERS, 1964, 8 (01): : 22 - 24
[10] CONCERNING THEORY OF GENERATION-RECOMBINATION NOISE IN SEMICONDUCTORS
BONCH-BRUEVICH, VL
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (07): : 1728 - +

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