Threading dislocation reduction in InP on GaAs by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on GaAs

被引：0
|
作者：
机构：
[1] Okuno, Yae
[2] Kawano, Toshihiro
[3] Tsuchiya, Tomonobu
[4] Taniwatari, Tsuyoshi
来源：
Okuno, Yae | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 17 条
  • [1] THREADING DISLOCATION REDUCTION IN INP ON GAAS BY THIN STRAINED INTERLAYER AND ITS APPLICATION TO THE FABRICATION OF 1.3-MU-M-WAVELENGTH LASER ON GAAS
    OKUNO, Y
    KAWANO, T
    TSUCHIYA, T
    TANIWATARI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 614 - 617
  • [2] Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots
    Zhang, L
    Boggess, TF
    Deppe, DG
    Huffaker, DL
    Shchekin, OB
    Cao, C
    APPLIED PHYSICS LETTERS, 2000, 76 (10) : 1222 - 1224
  • [3] STUDY OF THREADING-DISLOCATION REDUCTION BY STRAINED INTERLAYER IN INP LAYERS GROWN ON GAAS SUBSTRATES
    OKUNO, Y
    KAWANO, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 338 - 344
  • [4] Characterization of MOVPE grown GaAs1-xNx/GaAs multiple quantum wells emitting around 1.3-μm-wavelength region
    Klangtakai, P.
    Sanorpim, S.
    Yoodee, K.
    Ono, W.
    Nakajima, F.
    Katayama, R.
    Onabe, K.
    2007 2ND IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3, 2007, : 435 - +
  • [5] Fabrication of a 1.3-mu m-wavelength multiple-quantum-well laser on a (211)A InP substrate
    Okuno, Y
    Tsuchiya, T
    Okai, M
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 567 - 570
  • [6] Crystal growth and fabrication of a 1.3-mu m-wavelength multiple-quantum-well laser on a (211)A InP substrate
    Okuno, Y
    Tsuchiya, T
    Okai, M
    APPLIED PHYSICS LETTERS, 1997, 71 (14) : 1918 - 1920
  • [7] Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode
    Takeshi Kitatani
    Masahiko Kondow
    Koji Nakahara
    M. C. Larson
    Kazuhisa Uomi
    Optical Review, 1998, 5 : 69 - 71
  • [8] Temperature dependence of the threshold current and the lasing wavelength in 1.3-μm GaInNAs/GaAs single quantum well laser diode
    Kitatani, T
    Kondow, M
    Nakahara, K
    Larson, MC
    Uomi, K
    OPTICAL REVIEW, 1998, 5 (02) : 69 - 71
  • [9] 1.3-1.5-μm-wavelength GaAs/InAs superlattice quantum-dot light-emitting diodes grown on InP (411)A substrates
    Mori, J
    Nakano, T
    Shimada, T
    Hasegawa, S
    Asahi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A): : L901 - L903
  • [10] Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes
    李密锋
    倪海桥
    丁颖
    Bajek David
    Kong Liang
    Cataluna Maria Ana
    牛智川
    Chinese Physics B, 2014, (02) : 516 - 521
12