Electrical behavior of light modulator in GaAs/GaAlAs single quantum well structure

被引：0
|
作者：
Zhou, Jie [1 ]
Feng, Songlin [1 ]
Lu, Liwu [1 ]
Sun, Jinglan [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 1994年 / 13卷 / 01期
关键词：
Admittance spectroscopy - Subband;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
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页码：65 / 68
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