共 50 条
- [2] Yellow-green emission for ETS-LEDs and lasers based on a strained-InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 409 - 418
- [3] GROWTH AND CHARACTERIZATION OF INGAP YELLOW-GREEN LIGHT-EMITTING-DIODES BY LIQUID-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1249 - 1254
- [4] Growth and characterization of InGaP yellow-green light-emitting diodes by liquid-phase epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (5 A): : 1249 - 1254
- [6] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A): : L797 - L799
- [8] InGaN light-emitting diodes with quantum-well structures GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 879 - 887
- [9] ZNSE/ZNCDSE QUANTUM-WELL LIGHT-EMITTING-DIODES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 692 - 696