Modified three-junction model for gate turn off thyristor simulation with SPICE

被引：0

作者：

Guzman, V.M. ^{[1
]}

Gimenez, M.I. ^{[1
]}

Restrepo, J. ^{[1
]}

Aller, J.M. ^{[1
]}

Bueno, A. ^{[1
]}

Regidor, J.C. ^{[1
]}

机构：

[1] Univ Simon Bolivar, Caracas, Venezuela

来源：

Informacion Tecnologica | 1999年 / 10卷 / 05期

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摘要：

引用

页码：149 / 157

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[1] MICROPROCESSOR BASED SIMULATION AND DIGITAL LOGIC MODEL OF GATE TURN-OFF THYRISTOR
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[2] GATE TURN-OFF THYRISTOR DEVELOPMENTS.
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[3] TRANSIENT MODEL FOR GATE TURN-OFF THYRISTOR IN POWER ELECTRONIC SIMULATIONS
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[4] Two-dimensional simulation of the transient electrothermal effects during the gate turn-off thyristor turn-off
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[6] GATE TURN-OFF THYRISTOR IN TRACTION APPLICATIONS.
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[7] RECENT TRENDS OF THE GATE TURN-OFF THYRISTOR.
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[8] NEW APPROACH TO DESIGN OF A GATE TURN-OFF THYRISTOR
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[9] A GATE-TURN-OFF THYRISTOR CHOPPER FOR TRACTION DRIVES
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[10] Analytical model of a gate turn-off thyristor with nonmonotonic displacement of residual plasma
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